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attoAFM Ixs
low temperature atomic force microscope, cantilever based
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The attoAFM Ixs is an ultra-compact atomic force microscope
designed particularly for applications at low and ultra low temperatures.
The instrument works by scanning the sample below a fixed cantilever
and by measuring the cantilever deflection with highest precision
using a fiber based optical interferometer. Both contact and non-contact
mode are applicable. Furthermore, this system is suited for Magnetic
Force Microscopy (MFM), Electric Force Microscopy (EFM), and other
imaging modes.
The extreme mechanical stability of the measurement head allows
also for combination with cryogen free pulse-tube based cooling
systems for applications where liquid Helium is not available or
desired.

Principle - The microscope uses a
set of xyz-positioners for coarse positioning of the sample over
a range of several mm. Developed particularly for cryogenic applications,
the piezo scanner ANSxy50 provides a scan range of 12 x 12 µm2
even at liquid helium temperature. The adjustment of the cantilever
is performed outside of the cryostat prior to cooling down the
microscope. The exceptional combination of materials allows absolutely
stable high resolution imaging of surfaces.
Request Quotation & Support : |
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Available
Controller for this Product:
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FPGA-based, fully digital SPM controller
with xy-scan generator incl. feedback control und phase locked loop (PLL)
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| ANC350 |
Piezo positioning controller
for attocube's encoded positioners| |
| ANC300 |
Piezo positioning controller
for attocube's open-loop positioners | |
Complete
System Solutions:
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Complete system
configurations for this product. 
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| Product
Key Features
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ultra compact
AFM head |
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highly sensitive interferometric
deflection detection |
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unreached mechanical stability |
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adjustment of the cantilever
outside the cryostat prior to cooling the microscope |
| Benefits
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fits standard
cryogenic and magnet sample spaces |
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highest measurement sensitivity |
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ultra high resolution imaging & long-term
measurements |

AFM
images of a Si/SiO2 layerd substrate with a height of
20 ± 2 nm
and a periodicity of 2 µm. The data were recorded
at 4 K in non-contact mode (attocube application labs,
2009). |

| Zoom-in of the figure above,
recorded at 4 K
in non-contact mode. |
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